This is manufactured by Infineon Technologies. The manufacturer part number is IPD65R660CFD. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.5v @ 200µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The maximum gate charge and given voltages include 22 nc @ 10 v. It has a maximum Rds On and voltage of 660mohm @ 2.1a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 62.5w (tc). The products input capacitance at maximum includes 615 pf @ 100 v. The product is available in surface mount configuration. The product coolmos cfd2, is a highly preferred choice for users. pg-to252-3-313 is the supplier device package value. The continuous current drain at 25°C is 6a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.